MRF5S4140H中文资料465 MHz, 28 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

Overview The MRF5S4140HR3 and MRF5S4140HSR3 are designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28-volt base station equipment.
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特性 Features

•Typical Single–Carrier N–CDMA Performance @ 465 MHz, VDD = 28 Volts, IDQ = 1250mA, Pout = 28 Watts Avg., IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel
Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain: 21 dB
\tDrain Efficiency: 30%
\tACPR @ 750 kHz Offset: –47.6 dBc in 30 kHz Bandwidth

•Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 140 Watts CW Output Power

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•Internally Matched for Ease of Use

•Qualified Up to a Maximum of 32 VDD Operation

•Integrated ESD Protection

•Lower Thermal Resistance Package

•Low Gold Plating Thickness on Leads, 40µ″ Nominal.

•RoHS Compliant

•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.