MRF5S21100LR3中文资料2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET数据手册恩XP规格书

描述 Description

Overview Replaced by MRF5S21100HR3. \"H\" suffix indicates lower thermal resistance package. The MRF5S21100LR3 is designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.

特性 Features

•Typical 2–Carrier W–CDMA Performance for VDD = 28 Volts,
IDQ = 1050 mA, f1 = 2135 MHz,f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz,
Adjacent Channels Measured over 3.84 MHz BW @ f1 –5 MHz
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
@ f1 –10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Output Power: 23 Watts Avg.
\tPower Gain: 13.5 dB
\tEfficiency: 26%
\tIM3: –37 dBc
\tACPR: –40 dBc
•Internally Matched, Controlled Q, for Ease of Use
•High Gain, High Efficiency and High Linearity
•Integrated ESD Protection
•Designed for Maximum Gain and Insertion Phase Flatness
•Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW Output Power
•Excellent Thermal Stability
•Characterized with Series Equivalent Large–Signal Impedance Parameters
•Qualified Up to a Maximum of 32 VDD Operation
•Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
•Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ” Nominal.