MRF5S21100H中文资料2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

Overview The MRF5S21100HR3 and MRF5S21100HSR3 are designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications..
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特性 Features

•Typical 2-Carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 1050 mA, Pout = 23 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain: 13.5 dB
Drain Efficiency: 26%
IM3 @ 10 MHz Offset: –37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset: –40 dBc in 3.84 MHz Channel Bandwidth

•Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW Output Power

•Characterized with Series Equivalent Large-Signal Impedance Parameters

•Internally Matched for Ease of Use

•Qualified Up to a Maximum of 32 VDD Operation

•Integrated ESD Protection

•Lower Thermal Resistance Package

•Low Gold Plating Thickness on Leads, 40µ″ Nominal.

•RoHS Compliant

•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.