MRF5S9101M中文资料869-960 MHz, 100 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

OverviewReplaced by MRF5S9101NR1(NBR1). There are no form, fit or function changes with this part replacement. The MRF5S9101MR1 and MRF5S9101MBR1 are designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.

特性 Features

GSM Application
•Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, Pout =
100 Watts CW, Full Frequency Band (869–894 MHz and 921–960 MHz)
Power Gain: 17.5 dB
\tDrain Efficiency: 60%

GSM EDGE Application
•Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 650 mA, Pout =
50 Watts Avg., Full Frequency Band (869–894 MHz and 921–960 MHz)
Power Gain: 18 dB
\tSpectral Regrowth @ 400 kHz Offset = –63 dBc
\tSpectral Regrowth @ 600 kHz Offset = –78 dBc
\tEVM: 2.3% rms

•Capable of Handling 10:1 VSWR, @ 26 Vdc, @ 100 CW Output Power, @ f = 960 MHz

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•Internally Matched for Ease of Use

•Qualified Up to a Maximum of 32 VDD Operation

•Integrated ESD Protection

•200°C Capable Plastic Package

•In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.