Evaluation Board Rev 5.0 for the Si2493/57/34/15/04

Description The global Si2493/57/34/15/04-EVB evaluation board Rev 5.0 provides the system designer an easy way of evaluating the Si2493/57/34/15/04 ISOmodem®. The Si2493/57/34/15/04-EVB consists of a motherboard with a power supply, an RS-232 and USB interface, other ease-of-use features, and a

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SILABS

芯科科技

NPN EPITACIAL PLANAR TRANSISTOR

Description High Voltage Transistor

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TGS

AT90USB1287 (AVR) 64 QFN device (2.7V VCC 5.5V)

Overview This document describes the AT88CK109STK3, which is a development kit for the AT88SA100, AT88SA102, and ATSA8810HS CryptoAuthentication devices. This kit uses a modular approach. The development kit includes the AT88Microbase board and the AT88CK109BK3 CryptoAuthentication daughter board

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ATMEL

爱特梅尔

丝印：7D；Package：SOT23；NPN high-voltage transistor

1. General description NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low current (max. 100 mA) • High voltage (max. 300 V) • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Appli

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NEXPERIA

安世

NPN high-voltage transistor

1. General description NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low current (max. 100 mA) • High voltage (max. 300 V) • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Appli

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NEXPERIA

安世

TRANSISTOR (NPN)

FEATURES • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: MMBTA92S (PNP)

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FS

Silicon PNP transistor in a SOT-323 Plastic Package

Descriptions Silicon NPN transistor in a SOT-323 Plastic Package. Features High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MMBTA92W. Applications High voltage control circuit.

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FOSHAN

蓝箭电子

NPN HIGH VOLTAGE TRANSISTOR

FEATURES • NPN silicon, planar design • Collector-emitter voltage VCE = 300V • Collector current IC = 500mA • Lead free in comply with EU RoHS 2011/65/EU directives • Green molding compound as per IEC61249 Std. .(Halogen Free)

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PANJIT

強茂

General Purpose Transistor

FEATURES Plastic-Encapsulate Transistors Power dissipation & Collector current Pcm: 0.2W Icm: 0.3A High voltage V(BR): 300V

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SECOS

喜可士

High-Voltage NPN Transistor Surface Mount

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WEITRON