BC857BSH

Marking：7D；Package：TSSOP6；45 V, 100 mA PNP/PNP general-purpose double transistor

Featuresandbenefits •Lowcollectorcapacitance •Lowcollector-emittersaturationvoltage •Closelymatchedcurrentgain •Reducesnumberofcomponentsandboardspace •Nomutualinterferencebetweenthetransistors •High-temperatureapplicationsupto175°C

BC857BSH-Q

Marking：7D；Package：TSSOP6；45 V, 100 mA PNP/PNP general-purpose double transistor

Featuresandbenefits •Lowcollectorcapacitance •Lowcollector-emittersaturationvoltage •Closelymatchedcurrentgain •Reducesnumberofcomponentsandboardspace •Nomutualinterferencebetweenthetransistors •High-temperatureapplicationsupto175°C •QualifiedaccordingtoA

BZX38450-C5V6

Marking：7D；Package：SOD323；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8Vto10V •Specifie

BZX38450-C5V6-Q

Marking：7D；Package：SOD323；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8Vto10V •Specifie

BZX8850S-C7V5

Marking：7D；Package：SOD882BD；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanultrasmallSOD882BD(DFN1006BD-2)leadless Surface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Totalpowerdissipation:≤365mW •Toleranceseries:approximately±5 •Workin

BZX8850S-C7V5-Q

Marking：7D；Package：DFN1006BD-2；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanultrasmallSOD882BD(DFN1006BD-2)leadless Surface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Totalpowerdissipation:≤365mW •Toleranceseries:approximately±5 •Workin

DMC67D8UFDBQ-13

Marking：7D；Package：U-DFN2020-6；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features •LowOn-Resistance •LowInputCapacitance •LowProfile,0.6mmMaximumHeight •ESDProtectedGate •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability •PPAPCapable

DMC67D8UFDBQ-7

Marking：7D；Package：U-DFN2020-6；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features •LowOn-Resistance •LowInputCapacitance •LowProfile,0.6mmMaximumHeight •ESDProtectedGate •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability •PPAPCapable

MMBTA42

Marking：7D；Package：SOT23；NPN high-voltage transistor

1.Generaldescription NPNhigh-voltagetransistorinasmallSOT23Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:MMBTA92 2.Featuresandbenefits •Lowcurrent(max.100mA) •Highvoltage(max.300V) •AEC-Q101qualified 3.Applications •Telephony •Professionalco

MMBTA42-Q

Marking：7D；Package：SOT23；NPN high-voltage transistor

1.Generaldescription NPNhigh-voltagetransistorinasmallSOT23Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowcurrent(max.100mA) •Highvoltage(max.300V) •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications 3.Appli