丝印：7D；Package：TSSOP6；45 V, 100 mA PNP/PNP general-purpose double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • High-temperature applications up to 175 °C

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丝印：7D；Package：TSSOP6；45 V, 100 mA PNP/PNP general-purpose double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • High-temperature applications up to 175 °C • Qualified according to A

文件：235.86 Kbytes 页数：10 Pages

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丝印：7D；Package：SOD323；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8 V to 10 V • Specifie

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丝印：7D；Package：SOD323；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8 V to 10 V • Specifie

文件：235.89 Kbytes 页数：10 Pages

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丝印：7D；Package：SOD882BD；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Total power dissipation: ≤ 365 mW • Tolerance series: approximately ± 5 • Workin

文件：257.07 Kbytes 页数：11 Pages

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丝印：7D；Package：DFN1006BD-2；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Total power dissipation: ≤ 365 mW • Tolerance series: approximately ± 5 • Workin

文件：258.089 Kbytes 页数：11 Pages

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丝印：7D；Package：U-DFN2020-6；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • Low Input Capacitance • Low Profile, 0.6mm Maximum Height • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • PPAP Capable

文件：531.31 Kbytes 页数：10 Pages

DIODES

美台半导体

丝印：7D；Package：U-DFN2020-6；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • Low Input Capacitance • Low Profile, 0.6mm Maximum Height • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • PPAP Capable

文件：531.31 Kbytes 页数：10 Pages

DIODES

美台半导体

丝印：7D；Package：SOT23；NPN high-voltage transistor

1. General description NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: MMBTA92 2. Features and benefits • Low current (max. 100 mA) • High voltage (max. 300 V) • AEC-Q101 qualified 3. Applications • Telephony • Professional co

文件：181.58 Kbytes 页数：7 Pages

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丝印：7D；Package：SOT23；NPN high-voltage transistor

1. General description NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low current (max. 100 mA) • High voltage (max. 300 V) • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Appli

文件：181.12 Kbytes 页数：7 Pages

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