首页 >MMBT1>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

MMBT100

NPN General Purpose Amplifier

•Thisdeviceisdesignedforgeneralpurposeamplifierapplicationsatcollectorcurrentsto300mA. •Sourcedfromprocess10.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MMBT100

PN100/PN100A/MMBT100/MMBT100A

•Thisdeviceisdesignedforgeneralpurposeamplifierapplicationsatcollectorcurrentsto300mA. •Sourcedfromprocess10.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MMBT100A

NPN General Purpose Amplifier

•Thisdeviceisdesignedforgeneralpurposeamplifierapplicationsatcollectorcurrentsto300mA. •Sourcedfromprocess10.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MMBT100A

PN100/PN100A/MMBT100/MMBT100A

•Thisdeviceisdesignedforgeneralpurposeamplifierapplicationsatcollectorcurrentsto300mA. •Sourcedfromprocess10.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MMBT1010LT1

PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT

LowSaturationVoltage PNPSiliconDriverTransistors PartoftheGreenLine™Portfolioofdeviceswithenergy–conservingtraits. ThisPNPSiliconEpitaxialPlanarTransistorisdesignedtoconserveenergyingeneralpurposedriverapplications.ThisdeviceishousedintheSOT-23andSC–59pack

MotorolaMotorola, Inc

摩托罗拉

MMBT1010LT1

Low Saturation Voltage

PNPSiliconDriverTransistors PartoftheGreenLineTMPortfolioofdeviceswithenergy–conservingtraits. ThisPNPSiliconEpitaxialPlanarTransistorisdesignedtoconserveenergyingeneralpurposedriverapplications.ThisdeviceishousedintheSOT-23andSC–59packageswhicharedesigned

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

MMBT1010LT1

PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT

LowSaturationVoltagePNPSiliconDriverTransistors PartoftheGreenLinePortfolioofdeviceswithenergy–conservingtraits. ThisPNPSiliconEpitaxialPlanarTransistorisdesignedtoconserveenergyingeneralpurposedriverapplications.ThisdeviceishousedintheSOT-23andSC–59packa

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMBT1010T1

PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT

LowSaturationVoltagePNPSiliconDriverTransistors PartoftheGreenLinePortfolioofdeviceswithenergy–conservingtraits. ThisPNPSiliconEpitaxialPlanarTransistorisdesignedtoconserveenergyingeneralpurposedriverapplications.ThisdeviceishousedintheSOT-23andSC–59packa

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMBT1015

LOW FREQUENCY PNP AMPLIFIER TRANSISTOR

FEATURES *Collector-EmitterVoltage: BVCEO=-50V *Collectorcurrentupto150mA *HighhFElinearity *ComplementtoMMBT1815

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

MMBT1015-BL-AC3-R

LOW FREQUENCY PNP AMPLIFIER TRANSISTOR

FEATURES *Collector-EmitterVoltage: BVCEO=-50V *Collectorcurrentupto150mA *HighhFElinearity *ComplementtoMMBT1815

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

MMBT1015-BL-AE3-R

LOW FREQUENCY PNP AMPLIFIER TRANSISTOR

FEATURES *Collector-EmitterVoltage: BVCEO=-50V *Collectorcurrentupto150mA *HighhFElinearity *ComplementtoMMBT1815

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

MMBT1015-BL-AL3-R

LOW FREQUENCY PNP AMPLIFIER TRANSISTOR

FEATURES *Collector-EmitterVoltage: BVCEO=-50V *Collectorcurrentupto150mA *HighhFElinearity *ComplementtoMMBT1815

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

MMBT1015-BL-AN3-R

LOW FREQUENCY PNP AMPLIFIER TRANSISTOR

FEATURES *Collector-EmitterVoltage: BVCEO=-50V *Collectorcurrentupto150mA *HighhFElinearity *ComplementtoMMBT1815

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

MMBT1015-GR-AC3-R

LOW FREQUENCY PNP AMPLIFIER TRANSISTOR

FEATURES *Collector-EmitterVoltage: BVCEO=-50V *Collectorcurrentupto150mA *HighhFElinearity *ComplementtoMMBT1815

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

MMBT1015-GR-AE3-R

LOW FREQUENCY PNP AMPLIFIER TRANSISTOR

FEATURES *Collector-EmitterVoltage: BVCEO=-50V *Collectorcurrentupto150mA *HighhFElinearity *ComplementtoMMBT1815

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

MMBT1015-GR-AL3-R

LOW FREQUENCY PNP AMPLIFIER TRANSISTOR

FEATURES *Collector-EmitterVoltage: BVCEO=-50V *Collectorcurrentupto150mA *HighhFElinearity *ComplementtoMMBT1815

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

MMBT1015-GR-AN3-R

LOW FREQUENCY PNP AMPLIFIER TRANSISTOR

FEATURES *Collector-EmitterVoltage: BVCEO=-50V *Collectorcurrentupto150mA *HighhFElinearity *ComplementtoMMBT1815

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

MMBT1015-H

PNP EPITAXIAL SILICON TRANSISTOR

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •Collector-EmitterVoltage:BVCEO=-50V •Collectorcurrentupto150mA •HighHfelinearity •ComplementtoMMBT1815 •Ep

MCCMicro Commercial Components

美微科美微科半导体公司

MMBT1015-L

PNP EPITAXIAL SILICON TRANSISTOR

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •Collector-EmitterVoltage:BVCEO=-50V •Collectorcurrentupto150mA •HighHfelinearity •ComplementtoMMBT1815 •Ep

MCCMicro Commercial Components

美微科美微科半导体公司

MMBT1015L-BL-AC3-R

LOW FREQUENCY PNP AMPLIFIER TRANSISTOR

FEATURES *Collector-EmitterVoltage: BVCEO=-50V *Collectorcurrentupto150mA *HighhFElinearity *ComplementtoMMBT1815

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

产品属性

  • 产品编号:

    MMBT100

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 晶体管类型:

    NPN

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    400mV @ 20mA,200mA

  • 电流 - 集电极截止(最大值):

    50nA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    100 @ 150mA,5V

  • 频率 - 跃迁:

    250MHz

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-236-3,SC-59,SOT-23-3

  • 供应商器件封装:

    SOT-23-3

  • 描述:

    TRANS NPN 45V 0.5A SOT23-3

供应商型号品牌批号封装库存备注价格
onsemi(安森美)
23+
SOT-23(TO-236)
3022
原厂订货渠道,支持BOM配单一站式服务
询价
onsemi
24+
TO-236-3,SC-59,SOT-23-3
30000
晶体管-分立半导体产品-原装正品
询价
FARICHILD
2012+
SOT-23
30000
公司现货
询价
ON/安森美
21+
NA
147000
只做原装,假一罚十
询价
onsemi(安森美)
22+
SOT-23
2946
QQ询价 绝对原装正品
询价
NS
22+
SOT23
15300
绝对原装现货,价格低,欢迎询购!
询价
ON/安森美
20+
SOT-23
120000
原装正品 可含税交易
询价
ON/安森美
SOT23
7906200
询价
5000
公司存货
询价
NSC
05+
原厂原装
50051
只做全新原装真实现货供应
询价
更多MMBT1供应商 更新时间2024-5-28 11:27:00