NPN Epitaxial Silicon Transistor

Features • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. • General purpose switching & amplification application

文件：142.45 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features ● BVCEO > 40V ● IC = 600mA Collector Current ● Epitaxial Planar Die Construction ● Ultra-Small Surface Mount Package ● Complementary PNP Type: MMBT2907AT ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualifi

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DIODES

美台半导体

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT2907AT) • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 2) • Green Device (Note 3 and 4)

文件：182.3 Kbytes 页数：4 Pages

DIODES

美台半导体

NPN General Purpose Amplifier

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Capable of 150mWatts of Power Dissipation • Operating and Storage Junction Temperatures -55ć to 150ć • Collector Current: 0.6A

文件：113.89 Kbytes 页数：3 Pages

MCC

Plastic-Encapsulate Transistors NPN Silicon

Plastic-Encapsulate Transistors NPN Silicon P/b Lead-(Pb)-Free

文件：99.18 Kbytes 页数：5 Pages

WEITRON

丝印：1P；Package：SOT-523；NPN Transistors

■ Features ● Small Package ● Complementary to MMBT2907AT

文件：887.12 Kbytes 页数：2 Pages

KEXIN

科信电子

丝印：1P；Package：SOT-523；NPN SWITCHING TRANSISTOR

FEATURES ● Epitaxial planar die construction. ● Complementary PNP type available (MMBT2907AT). ● Collector Current Capability Ic=600mA. ● Ultra-small surface mount package. APPLICATIONS ● General switching and amplification.

文件：184.63 Kbytes 页数：4 Pages

BILIN

银河微电

SOT-523 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complementary to MMBT2907AT ● Small Package

文件：4.33433 Mbytes 页数：4 Pages

JIANGSU

长电科技

NPN Silicon General Purpose Transistors

FEATURES • Epitaxial Planar Die Construction • Complementary PNP Type Available(MMBT2907FW) • Ideal for Medium Power Amplification and Switching

文件：815.63 Kbytes 页数：5 Pages

SECOS

喜可士

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO: 75 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：140.16 Kbytes 页数：2 Pages

WINNERJOIN

永而佳