MMBR911LT1G中文资料ADPOW数据手册PDF规格书

DESCRIPTION:

Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package. This small–signal plastic transistor offers superior quality and performance at low cost.

FEATURES:

· High Gain–Bandwidth Product

fT = 7.0 GHz (Typ) @ 30 mA

· Low Noise Figure

NF = 1.7 dB (Typ) @ 500 MHz

· High Gain

GNF = 17 dB (Typ) @ 10 mA/500 MHz

· State–of–the–Art Technology

Fine Line Geometry

Ion–Implanted Arsenic Emitters

Gold Top Metallization and Wires

Silicon Nitride Passivation

· Available in tape and reel packaging options:

T1 suffix = 3,000 units per reel