MMBR901LT1中文资料摩托罗拉数据手册PDF规格书

The RF Line NPN Silicon High-Frequency Transistor

 

Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times.

• High Current–Gain — Bandwidth Product

• Low Noise Figure @ f = 1.0 GHz —

NF(matched) = 1.8 dB (Typ) (MRF9011LT1)

NF(matched) = 1.9 dB (Typ) (MMBR901LT1, T3)

• High Power Gain —

Gpe(matched)= 13.5 dB (Typ) @ f = 1.0 GHz (MRF9011LT1)

Gpe(matched) = 12.0 dB (Typ) @ f = 1.0 GHz (MMBR901LT1, T3)

• Guaranteed RF Parameters (MRF9011LT1)

• Surface Mounted SOT–23 & SOT–143 Offer Improved RF Performance Lower Package Parasitics

High Gain

• Available in tape and reel packaging options:

T1 suffix = 3,000 units per reel

T3 suffix = 10,000 units per reel