MMBR4957LT1中文资料摩托罗拉数据手册PDF规格书

The RF Line

PNP Silicon High-Frequency Transistor

. . . designed for high–gain, low–noise amplifier oscillator and mixer applications. Specifically packaged for thick and thin–film circuits using surface mount components.

• High Gain — Gpe = 17 dB Typ @ f = 450 MHz

• Low Noise — NF = 3.0 dB Typ @ f = 450 MHz

• Available in tape and reel packaging options by adding suffix:

T1 suffix = 3,000 units per reel

T3 suffix = 10,000 units per reel