MMBR5179LT1中文资料摩托罗拉数据手册PDF规格书

The RF Line

NPN Silicon High-Frequency Transistor

Designed for small–signal amplification at frequencies to 500 MHz. Specifically packaged for use in thick and thin–film circuits using surface mount components.

• High Gain — Gpe = 15 dB Typ @ f = 200 MHz

• Low Noise — NF = 4.5 dB Typ @ f = 200 MHz

• Available in tape and reel packaging options:

T1 suffix = 3,000 units per reel