RF & MICROWAVE TRANSISTORS

DESCRIPTION The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. KEY FEATURES ◾ High FTau-1.4GHz ◾ Low noise-4.5dB@200MHz ◾ Low cost SOT23 package APPLICATIONS/BENEFITS ◾ LNA, Oscillator, Pre-Driver

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MICROSEMI

美高森美

RF AMPLIFIER TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor Designed for small–signal amplification at frequencies to 500 MHz. Specifically packaged for use in thick and thin–film circuits using surface mount components. • High Gain — Gpe = 15 dB Typ @ f = 200 MHz • Low Noise — NF = 4.5 dB Typ @ f = 200

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MOTOROLA

摩托罗拉

RF & MICROWAVE TRANSISTORS

Microchip

微芯科技

SOT-23

FARICHILD

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SOT-23

UTC/友顺

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