MMBR521LT1中文资料摩托罗拉数据手册PDF规格书

The RF Line

PNP Silicon High-Frequency Transistor

Designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast switching times.

• High Current Gain–Bandwidth Product —

fT = 3.4 GHz (Typ) @ IC = –35 mAdc (MMBR521LT1)

fT = 4.2 GHz (Typ) @ IC = –50 mAdc (MRF5211LT1)

• Low Noise Figure @ f = 1.0 GHz —

NF(matched) = 2.5 dB (Typ) (MMBR521LT1)

NF(matched) = 2.8 dB (Typ) (MRF5211LT1)

• High Power Gain — Gpe (matched) = 11 dB (Typ)

• Guaranteed RF Parameters

• Surface Mounted SOT–23 (MMBR521LT1) & SOT–143 (MRF5211LT1) Offer Improved RF Performance

Lower Package Parasitics

Higher Gain

• Available in tape and reel packaging options:

T1 suffix = 3,000 units per reel