MMBR571LT1中文资料摩托罗拉数据手册PDF规格书

The RF Line

NPN Silicon High-Frequency Transistors

Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This Motorola series of small–signal plastic transistors offers superior quality and performance at low cost.

• High Gain–Bandwidth Product

fT = 8.0 GHz (Typ) @ 50 mA

• Low Noise Figure

NFmin = 1.6 dB (Typ) @ f = 1.0 GHz (MRF5711LT1, MRF571)

• High Gain

GNF = 17 dB (Typ) @ 30 mA/500 MHz (MMBR571LT1)

• High Power Gain

Gpe (matched) = 13.5 dB (Typ) (MRF5711LT1)

• State–of–the–Art Technology

Fine Line Geometry

Ion–Implanted Arsenic Emitters

Gold Top Metallization and Wires

Silicon Nitride Passivation

• Available in tape and reel packaging options:

T1 suffix = 3,000 units per reel