MMBR911L

Silicon NPN RF Transistor

DESCRIPTION •HighGain GNF=17dBTYP.@IC=10mA,f=500MHz •LowNoiseFigure NF=1.7dBTYP.@f=500MHz •HighCurrent-GainBandwidthProduct fT=6.0GHzTYP.@IC=30mA APPLICATIONS •Designedforlownoise,widedynamicrangefront-endamplifiersandlow-noiseVCO’S.

MMBR911L

isc Silicon NPN RF Transistor

DESCRIPTION •HighGain GNF=17dBTYP.@IC=10mA,f=500MHz •LowNoiseFigure NF=1.7dBTYP.@f=500MHz •HighCurrent-GainBandwidthProduct fT=6.0GHzTYP.@IC=30mA APPLICATIONS •Designedforlownoise,widedynamicrangefront-endamplifiersandlow-noiseVCO’S.

MMBR911L

Trans GP BJT NPN 12V 0.06A 3-Pin SOT-23;

MMBR911LT1

IC = 60 mA LOW NOISE HIGH–FREQUENCY TRANSISTOR NPN SILICON;

The RF Line\nNPN Silicon High-Frequency TransistorDesigned for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package. This Motorola small–signal plastic transistor offers superior quality and performance at low cost.• High Gain–Bandwidth Product\n   fT = 7.0 GHz (Typ) @ 30 mA\n• Low Noise Figure\n   NF = 1.7 dB (Typ) @ 500 MHz\n• High Gain\n   GNF = 17 dB (Typ) @ 10 mA/500 MHz\n• State–of–the–Art Technology\n   Fine Line Geometry\n   Ion–Implanted Arsenic Emitters\n   Gold Top Metallization and Wires\n   Silicon Nitride Passivation\n• Available in tape and reel packaging options:\n   T1 suffix = 3,000 units per reel

MMBR911LT1

NPN Silicon High-Frequency Transistor

TheRFLine NPNSiliconHigh-FrequencyTransistor Designedforlownoise,widedynamicrangefront–endamplifiersandlow–noiseVCO’s.Availableinasurface–mountableplasticpackage.ThisMotorolasmall–signalplastictransistorofferssuperiorqualityandperformanceatlowcost. •HighGain

MMBR911LT1

NPN SILICON LOW NOISE, HIGH-FREQUENCY TRANSISTOR

DESCRIPTION: Designedforlownoise,widedynamicrangefront–endamplifiersandlow–noiseVCO’s.Availableinasurface–mountableplasticpackage.Thissmall–signalplastictransistorofferssuperiorqualityandperformanceatlowcost. FEATURES: ·HighGain–BandwidthProduct fT=7.0GHz

MMBR911LT1G

NPN SILICON LOW NOISE, HIGH-FREQUENCY TRANSISTOR

DESCRIPTION: Designedforlownoise,widedynamicrangefront–endamplifiersandlow–noiseVCO’s.Availableinasurface–mountableplasticpackage.Thissmall–signalplastictransistorofferssuperiorqualityandperformanceatlowcost. FEATURES: ·HighGain–BandwidthProduct fT=7.0GHz

MMBR911LT1

NPN SILICON LOW NOISE, HIGH-FREQUENCY TRANSISTOR;