MMBR911LT1中文资料IC = 60 mA LOW NOISE HIGH–FREQUENCY TRANSISTOR NPN SILICON数据手册恩XP规格书

描述 Description

The RF Line
NPN Silicon High-Frequency TransistorDesigned for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package. This Motorola small–signal plastic transistor offers superior quality and performance at low cost.
• High Gain–Bandwidth Product
   fT = 7.0 GHz (Typ) @ 30 mA
• Low Noise Figure
   NF = 1.7 dB (Typ) @ 500 MHz
• High Gain
   GNF = 17 dB (Typ) @ 10 mA/500 MHz
• State–of–the–Art Technology
   Fine Line Geometry
   Ion–Implanted Arsenic Emitters
   Gold Top Metallization and Wires
   Silicon Nitride Passivation
• Available in tape and reel packaging options:
   T1 suffix = 3,000 units per reel