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MJE2955-G

General Purpose Transistor

Features - General Purpose and Switching Application

文件:459.58 Kbytes 页数:3 Pages

COMCHIP

典琦

MJE2955T

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for general purpose amplifier andswitching applications. Pinning 1 = Base 2 = Collector 3 = Emitter

文件:196.1 Kbytes 页数:1 Pages

DCCOM

道全

MJE2955T

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type MJE3055T ·DC current gain -hFE= 20–70 @ IC= -4 Adc ·Collector–emitter saturation voltage - VCE(sat)= -1.1 Vdc (Max) @ IC=- 4 Adc APPLICATIONS ·Designed for general–purpose switching and amplifier applications.

文件:132.43 Kbytes 页数:3 Pages

ISC

无锡固电

MJE2955T

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON POWER TRANSISTORS ...designed for usein general-purpose amplifier and switching applications FEATURES: * Power Dissipation - PD = 75 W © Tc = 25°C * DC Current Gain hFE = 20- 100 © lc = 4.0 A * vCE(isrt) = 1-1 V (Max.) © lc = 4.0 A, IB= 400 mA

文件:85.06 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MJE2955T

Silicon PNP Power Transistors MJE2955T

DESCRIPTION ·With TO-220 package ·Complement to type MJE3055T ·DC current gain -hFE= 20–70 @ IC=-4 Adc ·Collector–emitter saturation voltage - VCE(sat)= -1.1 Vdc (Max) @ IC=- 4 Adc APPLICATIONS ·Designed for general–purpose switching and amplifier applications.

文件:92.64 Kbytes 页数:3 Pages

SAVANTIC

MJE2955T

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power amplifier and switching applications.

文件:93.11 Kbytes 页数:1 Pages

TGS

MJE2955T

SILICON EPITAXIAL PLANAR TRANSISTOR

GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose

文件:64.709 Kbytes 页数:1 Pages

WINGS

永盛电子

MJE2955T

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose

文件:47.46 Kbytes 页数:1 Pages

WINGS

永盛电子

MJE2955T

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES

文件:65.19 Kbytes 页数:4 Pages

STMICROELECTRONICS

意法半导体

MJE2955T

COMPLEMENTARY SILICON POWER TRANSISTORS

■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T.

文件:61.49 Kbytes 页数:4 Pages

STMICROELECTRONICS

意法半导体

晶体管资料

  • 型号:

    MJE2955

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-PNP

  • 性质:

    低频或音频放大 (LF)_功率放大 (L)

  • 封装形式:

    直插封装

  • 极限工作电压:

    70V

  • 最大电流允许值:

    10A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BD208,BD214/80,BD608,

  • 最大耗散功率:

    90W

  • 放大倍数:

  • 图片代号:

    B-21

  • vtest:

    70

  • htest:

    999900

  • atest:

    10

  • wtest:

    90

技术参数

  • PCM(W):

    2

  • IC(A):

    10

  • VCBO(V):

    70

  • VCEO(V):

    60

  • VEBO(V):

    5

  • hFEMin:

    20

  • hFEMax:

    100

  • hFE@VCE(V):

    4

  • hFE@IC(A):

    4

  • VCE(sat)(V):

    8

  • VCE(sat)\u001E@IC(A):

    10

  • VCE(sat)\u001E@IB(A):

    3.3

  • Package:

    TO-220-3L

供应商型号品牌批号封装库存备注价格
ST/意法
25+
TO-220
32000
ST/意法全新特价MJE2955即刻询购立享优惠#长期有货
询价
FSC
23+
TO-220
4833
原厂原装正品
询价
FAIRCHILD/仙童
24+
TO 220
155552
明嘉莱只做原装正品现货
询价
FSC
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
询价
F
24+
TO-220
8866
询价
MOT
25+
TO-220
1400
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ST
17+
DIP
9888
全新进口原装,现货库存
询价
ST
22+
TO-220
10032
进口原装
询价
SAMSUNG
25+
TO-220
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
ON
23+
TO-220
10000
专做原装正品,假一罚百!
询价
更多MJE2955供应商 更新时间2026-2-1 14:14:00