| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MJE2955 | TO-220-3L Plastic-Encapsulate Transistors FEATURES GeneralPurposeandSwitchingApplications | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 |  | |
MJE2955 | POWER TRANSISTORS(10A,60V,75W) COMPLEMENTARYSILICONPOWERTRANSISTORS. | MOSPEC MOSPEC |  | |
MJE2955 | General Purpose and Switching Applications GeneralPurposeandSwitchingApplications •DCCurrentGainSpecifiedtoIC=10A •HighCurrentGainBandwidthProduct:fT=2MHz(Min.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
MJE2955 | TO-220-3L Plastic-Encapsulate Transistors | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | |
MJE2955 | PNP Silicon Plastic-Encapsulate Transistor | MCCMicro Commercial Components 美微科美微科半导体公司 |  | |
Complementary Silicon power transistors (10A / 60V / 75W) DESCRIPTION TheMJE3055Aisasiliconepitaxial-baseplanarNPNtransistorinTO-220ABpackage. ltisintendedforuseingeneral-purposeamplifierandswitdingapplications. ThecomplementaryPNPtypeisMJE2955A. FEATURES ●Designedforgeneral-purposeswitchingandamplifierapplications. | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 |  | ||
General Purpose Transistor Features -GeneralPurposeandSwitchingApplication | COMCHIPComchip Technology 典琦典琦科技股份有限公司 |  | ||
POWER TRANSISTORS(10A,60V,75W) COMPLEMENTARYSILICONPOWERTRANSISTORS. | MOSPEC MOSPEC | | ||
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS ComplementarySiliconPlasticPowerTransistors ...designedforuseingeneral–purposeamplifierandswitchingapplications. •DCCurrentGainSpecifiedto10Amperes •HighCurrentGain—BandwidthProduct— fT=2.0MHz(Min)@IC=500mAdc | MotorolaMotorola, Inc 摩托罗拉 |  | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION TheMJE3055Tisasiliconepitaxial-baseNPNtransistorinJedecTO-220package.Itisintendedforpowerswitchingcircuitsandgeneral-purposeamplifiers.ThecomplementaryPNPtypeisMJE2955T. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | ||
SILICON EPITAXIAL PLANAR TRANSISTOR GENERALDESCRIPTION Complementary,highpowertransistorsinaplasticenvelope,primarilyforuseinaudioandgeneralpurpose | WINGSWing Shing Computer Components Wing Shing Computer Components |  | ||
PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) GENERALDESCRIPTION Complementary,highpowertransistorsinaplasticenvelope,primarilyforuseinaudioandgeneralpurpose | WINGSWing Shing Computer Components Wing Shing Computer Components | | ||
General Purpose and Switching Applications GeneralPurposeandSwitchingApplications •DCCurrentGainSpecifiedtoIC=10A •HighCurrentGainBandwidthProduct:fT=2MHz(Min.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS ■STMicroelectronicsPREFERRED SALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES DESCRIPTION TheMJE3055TisasiliconEpitaxial-BaseNPN transistorinJedecTO-220package.Itis intendedforpowerswitchingcircuitsand general-purposeamplifiers.Thecomplementary PNPtypeisMJE2955T. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
HIGH VOLTAGE TRANSISTOR HIGHVOLTAGETRANSISTOR DESCRIPTION TheUTCMJE2955Tisdesignedforgeneralpurposeofamplifierandswitchingapplications. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | ||
Silicon PNP Power Transistors MJE2955T DESCRIPTION ·WithTO-220package ·ComplementtotypeMJE3055T ·DCcurrentgain-hFE=20–70@IC=-4Adc ·Collector–emittersaturationvoltage-VCE(sat)=-1.1Vdc(Max)@IC=-4Adc APPLICATIONS ·Designedforgeneral–purposeswitchingandamplifierapplications. | SAVANTIC Savantic, Inc. |  | ||
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designedforgeneralpurposeamplifierandswitchingapplications. Pinning 1=Base 2=Collector 3=Emitter | DCCOMDc Components 直流元件直流元件有限公司 |  | ||
Complementary Silicon Plastic Power Transistors 10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS−75WATTS MJE2955T(PNP) MJE3055T(NPN) Thesedevicesaredesignedforuseingeneral−purposeamplifierandswitchingapplications. Features •DCCurrentGainSpecifiedto10A •HighCurrentGain−BandwidthProduct−fT=2.0MHz(Min | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | ||
Complementary Silicon Power Ttransistors DESCRIPTION Itisintentedforuseinpoweramplifierandswitchingapplications. | TGS Tiger Electronic Co.,Ltd |  | ||
Silicon PNP Power Transistors DESCRIPTION ·WithTO-220package ·ComplementtotypeMJE3055T ·DCcurrentgain-hFE=20–70@IC=-4Adc ·Collector–emittersaturationvoltage-VCE(sat)=-1.1Vdc(Max)@IC=-4Adc APPLICATIONS ·Designedforgeneral–purposeswitchingandamplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-PNP
- 性质：
低频或音频放大 （LF）_功率放大 （L）
- 封装形式：
直插封装
- 极限工作电压：
70V
- 最大电流允许值：
10A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BD208,BD214/80,BD608,
- 最大耗散功率：
90W
- 放大倍数：
- 图片代号：
B-21
- vtest：
70
- htest：
999900
- atest：
10
- wtest：
90
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
长电 |
22+ |
TO-220-3L |
32350 |
深圳存库原装现货 |
询价 | ||
ST |
15+ |
TO220 |
35250 |
原装进口现货,假一罚十 |
询价 | ||
FSC |
21+ |
TO-220 |
2333 |
专营原装正品现货,当天发货,可开发票! |
询价 | ||
FSC |
23+ |
TO-220 |
4833 |
原厂原装正品 |
询价 | ||
isc |
2024+ |
TO-220 |
5000 |
国产品牌isc,质量等同原装 |
询价 | ||
FAIRCHILD/仙童 |
24+ |
TO 220 |
155552 |
明嘉莱只做原装正品现货 |
询价 | ||
ST |
1305+ |
TO-220 |
12000 |
公司特价原装现货 |
询价 | ||
F |
08+(pbfree) |
TO-220 |
8866 |
询价 | |||
CJ |
2017+ |
TO220 |
65895 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
MOT |
2020+ |
TO-220 |
1400 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 |
