80 V, 8 A NPN high power bipolar transistor

NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.\n PNP complement: MJD45H11 • High thermal power dissipation capability\n• High energy efficiency due to less heat generation\n• Electrically similar to popular MJD44H series\n• Low collector emitter saturation voltage\n• Fast switching speeds;

Nexperia

安世

Complementary power transistors

These devices are manufactured using low voltage multi epitaxial planar technology. They are intended for general-purpose linear and switching applications. Low collector-emitter saturation voltage\nFast switching speed\nSurface-mounting TO-252 (DPAK) power package in tape and reel (suffix \"T4\");

ST

意法半导体

Complementary Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“

文件：310.51 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

SILICON POWER TRANSISTORS

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra

文件：192.88 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS

Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic S

文件：192.88 Kbytes 页数：6 Pages

Motorola

摩托罗拉

Complementary Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“

文件：310.51 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in

文件：132.18 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

isc Silicon NPN Power Transistors

DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD45H11 ·DPAK for Surface Mount Applications APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in appl

文件：342.76 Kbytes 页数：2 Pages

ISC

无锡固电

Complementary Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“

文件：310.51 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in

文件：132.18 Kbytes 页数：9 Pages

ONSEMI

安森美半导体