MJ2501

isc Silicon PNP Darlingtion Power Transistor

DESCRIPTION •Built-inBase-EmitterShuntResistors •HighDCcurrentgain hFE=1000(Min)@IC=-5A •Collector-EmitterBreakdownVoltage V(BR)CEO=-80V(Min) •ComplementtotypeMJ3001 APPLICATIONS •Designedforuseasoutputdevicesincomplementary generalpurpose

MJ2501

Medium-Power Complementary Silicon Transistors

Medium-PowerComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hpE=4000(Typ)@IQ=5.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterShuntResistors

MJ2501

Silicon complementary trasistors power darlington

PowerTransistors TO-3Case(Continued)

MJ2955

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS115WATTS 2N3055(NPN)MJ2955(PNP) designedforgeneral–purposeswitchingandamplifierapplications. 1.DCCurrentGain—hFE=20–70@IC=4Adc 2.Collector–EmitterSaturationVoltage—VCE(sat)=1.1Vdc(Max)@IC=4Adc

MJ2955

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIOPOWERAMPLIFIER DCTODCCONVERTER HighCurrentCapability HighPowerDissipation ComplementarytoMJ3055

MJ2955

Complementary Silicon Power Transistors

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,115WATTS Complementarysiliconpowertransistorsaredesignedforgeneral−purposeswitchingandamplifierapplications. Features •DCCurrentGain−hFE=20−70@IC=4Adc •Collector−EmitterSaturationVoltage−VCE(sat

MJ2955

Complementary Silicon Power Transistors

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,115WATTS Complementarysiliconpowertransistorsaredesignedforgeneral−purposeswitchingandamplifierapplications. Features •DCCurrentGain−hFE=20−70@IC=4Adc •Collector−EmitterSaturationVoltage−VCE(sat

MJ2955

Silicon PNP Power Transistors

DESCRIPTION ·WithTO-3package ·ComplementtotypeMJ2955 ·DCcurrentgain-hFE=20–70@IC=4Adc ·Excellentsafeoperatingarea APPLICATIONS ·Designedforgeneral–purposeswitchingandamplifierapplications.

MJ2955

isc Silicon PNP Power Transistors

DESCRIPTION ·ExcellentSafeOperatingArea ·DCCurrentGain-:hFE=20-70@IC=-4A ·Collector-EmitterSaturationVoltage-:VCE(sat)=-1.1V(Max)@IC=-4A ·ComplementtoType2N3055 APPLICATIONS ·Designedforgeneral-purposeswitchingandamplifierapplications

MJ2955

COMPLEMENTARY SILICON POWER TRANSISTORS

Description Thedevicesaremanufacturedinepitaxial-baseplanartechnologyandaresuitableforaudio,powerlinearandswitchingapplications. Features ■Lowcollector-emittersaturationvoltage ■ComplementaryNPN-PNPtransistors Applications ■Generalpurpose ■Audi