| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MJ2501 | Silicon PNP Power Transistors DESCRIPTION ·WithTO-3package ·DARLINGTON ·HighDCcurrentgain ·ComplementtotypeMJ3000/3001 APPLICATIONS ·Foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications | SAVANTIC Savantic, Inc. |  | |
MJ2501 | COMPLEMENTARY POWER DARLINGTONS COMPLEMENTARYPOWERDARLINGTONS TheMJ2500,andMJ2501aresiliconepitaxial-basePNPpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecTO-3metalcase. Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryNPNtypesaretheMJ30 | COMSET Comset Semiconductor |  | |
MJ2501 | Power Transistors PowerTransistors TO-3Case(Continued) | CentralCentral Semiconductor Corp 美国中央半导体 |  | |
MJ2501 | isc Silicon PNP Darlingtion Power Transistor DESCRIPTION •Built-inBase-EmitterShuntResistors •HighDCcurrentgain hFE=1000(Min)@IC=-5A •Collector-EmitterBreakdownVoltage V(BR)CEO=-80V(Min) •ComplementtotypeMJ3001 APPLICATIONS •Designedforuseasoutputdevicesincomplementary generalpurpose | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
MJ2501 | Medium-Power Complementary Silicon Transistors Medium-PowerComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hpE=4000(Typ)@IQ=5.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterShuntResistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
MJ2501 | Silicon complementary trasistors power darlington PowerTransistors TO-3Case(Continued) | CentralCentral Semiconductor Corp 美国中央半导体 | | |
MJ2501 | DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON Medium-PowerComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain— hFE=4000(Typ)@IC=5.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterShuntResistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
MJ2501 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION TheMJ2501isaSiliconEpitaxial-BasePNPpowertransistorsinmonolithicDarlingtonconfiguration,mountedinJedecTO-3metacase.Itisintentedforuseinpowerlinearandswitchingapplications. ■STMicroelectronicsPREFERRED SALESTYPES ■COMPLEMENTARYPNP-NPNDEVI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | |
MJ2501 | 10 Ampere Darlington Power Transistors Complementary Silicon [multicomp] Features: •Medium-powercomplementarySiliconTransistorsforuseasoutputdevicesin complementarygeneralpurposeamplifierapplications. •HighDCCurrentGain hFE=1000(Typical)atIC=5.0A. •MonolithicconstructionwithbuiltBase-EmitterShuntResistors. | ETC1List of Unclassifed Manufacturers 未分类制造商 |  | |
MJ2501 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
MJ2501 | Silicon NPN Power Transistors | SAVANTIC Savantic, Inc. | | |
MJ2501 | COMPLEMENTARY POWER DARLINGTONS | COMSET Comset Semiconductor | | |
MJ2501 | 包装：剪切带（CT）带盒（TB） 封装/外壳：TO-204AA，TO-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 80V 10A TO3 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
CAPTIVEPANELSCREWS | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | ||
Eight-bitmicrocontroller | FUMANSHENZHEN FUMAN ELECTRONICS CO., LTD. 富满微电子深圳市富满微电子集团股份有限公司 |  | ||
HIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEMULTIPHOTOCOUPLERSERIES | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | ||
HIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEMULTIPHOTOCOUPLERSERIES DESCRIPTION ThePS2501-1,-4andPS2501L-1,-4areopticallycoupledisolatorscontainingaGaAslightemittingdiodeandanNPNsiliconphototransistor. ThePS2501-1,-4areinaplasticDIP(DualIn-linePackage)andthePS2501L-1,-4areleadbendingtype(Gullwing)forsurfacemount. FEATUR | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | ||
DualN-Channel2.5VSpecifiedPowerTrenchMOSFET GeneralDescription ThisN-Channel2.5VspecifiedMOSFETisaruggedgateversionofFairchildSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationswithawiderangeofgatedrivevoltage(2.5V–12V). Features •6A,20V.RDS(ON)=0.018Ω@VG | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | ||
DualN-Channel2.5VSpecifiedPowerTrenchMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-P+Darl+Di
- 性质：
低频或音频放大 （LF）_开关管 （S）_功率放大 （L
- 封装形式：
直插封装
- 极限工作电压：
60V
- 最大电流允许值：
100A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
2
- 可代换的型号：
BDW84A..D,BCX64A...C,BDX66,MJ4030,2N6050,2N6051,2N6052,
- 最大耗散功率：
150W
- 放大倍数：
β>1000
- 图片代号：
E-44
- vtest：
60
- htest：
999900
- atest：
100
- wtest：
150
产品属性
- 产品编号：
MJ2501
- 制造商：
STMicroelectronics
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
剪切带（CT）带盒（TB）
- 晶体管类型：
PNP - 达林顿
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
4V @ 50mA，10A
- 电流 - 集电极截止（最大值）：
1mA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
1000 @ 5A，3V
- 工作温度：
200°C（TJ）
- 安装类型：
底座安装
- 封装/外壳：
TO-204AA，TO-3
- 供应商器件封装：
TO-3
- 描述：
TRANS PNP DARL 80V 10A TO3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
23+ |
标准封装 |
17048 |
全新原装正品/价格优惠/质量保障 |
询价 | ||
ON |
23+ |
N/A |
5000 |
代理分销,可追溯 |
询价 | ||
1 |
询价 | ||||||
MOT/ON |
16+ |
TO-3 |
2500 |
原装现货假一罚十 |
询价 | ||
ISC |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
MOT |
1802+ |
TO-3 |
6528 |
只做原装正品现货,或订货假一赔十! |
询价 | ||
MOT |
23+ |
TO-3 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
23+ |
N/A |
36000 |
正品授权货源可靠 |
询价 | |||
MOT/ON |
专业铁帽 |
TO-3 |
2500 |
原装铁帽专营,代理渠道量大可订货 |
询价 | ||
MOT/ON |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
询价 |
