10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

文件：132.16 Kbytes 页数：4 Pages

Motorola

摩托罗拉

isc Silicon PNP Darlingtion Power Transistor

DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain hFE = 1000 (Min) @ IC = -5A ·Collector-Emitter Breakdown Voltage V(BR)CEO= -60V(Min) ·Complement to type MJ3000 APPLICATIONS ·Designed for use as output devices in complementary general purpose

文件：74.85 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ3000/3001 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications

文件：118.39 Kbytes 页数：3 Pages

SAVANTIC

Medium-Power Complementary Silicon Transistors

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hpE = 4000 (Typ) @ IQ = 5.0 Adc • Monolithic Construction with Built-in Base-Emitter Shunt Resistors

文件：88.39 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ3000/3001 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications

文件：118.39 Kbytes 页数：3 Pages

SAVANTIC

Medium-Power Complementary Silicon Transistors

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hpE = 4000 (Typ) @ IQ = 5.0 Adc • Monolithic Construction with Built-in Base-Emitter Shunt Resistors

文件：88.39 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon PNP Darlingtion Power Transistor

DESCRIPTION • Built-in Base-Emitter Shunt Resistors • High DC current gain hFE = 1000 (Min) @ IC = -5A • Collector-Emitter Breakdown Voltage V(BR)CEO= -80V(Min) • Complement to type MJ3001 APPLICATIONS • Designed for use as output devices in complementary general purpose

文件：72.63 Kbytes 页数：2 Pages

ISC

无锡固电

10 Ampere Darlington Power Transistors Complementary Silicon

[multicomp] Features: • Medium-power complementary Silicon Transistors for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain hFE = 1000 (Typical) at IC = 5.0A. • Monolithic construction with built Base-Emitter Shunt Resistors.

文件：485.91 Kbytes 页数：4 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJ2501 is a Silicon Epitaxial-Base PNP power transistors in monolithic Darlington configuration, mounted in Jedec TO-3 meta case. It is intented for use in power linear and switching applications. ■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVI

文件：70.25 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

Silicon complementary trasistors power darlington

Power Transistors TO-3 Case (Continued)

文件：41.47 Kbytes 页数：1 Pages

Central