SUBMINIATURE PHOTOINTERRUPTER

Description The MIT-4A11A consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic package. It is a transmissive subminiature photointerrupter. Features • Ultra-compact • PWB mounting type package • High sensing accuracy ( Slit width

文件：49.14 Kbytes 页数：3 Pages

UOT

东贝光电

SUBMINIATURE PHOTOINTERRUPTER

Description The MIT-4A11A consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic package. It is a transmissive subminiature photointerrupter. Features • Ultra-compact • PWB mounting type package • High sensing accuracy ( Slit width

文件：49.14 Kbytes 页数：3 Pages

UOT

东贝光电

SUBMINIATURE PHOTOINTERRUPTER

Description The MIT-4A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic package. It is a transmissive subminiature photointerrupter. Features • Ultra-compact • PWB mounting type package • High sensing accuracy ( Slit width

文件：49.61 Kbytes 页数：3 Pages

UOT

东贝光电

SLOTTED PHOTOINTERRUPTER

Description The MIT-5A116 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter. Features • Non -contact switching • For- direct pc board or • Dual - in - line socket mount

文件：60.71 Kbytes 页数：3 Pages

UOT

东贝光电

SLOTTED PHOTOINTERRUPTER

Description The MIT-5A116-U consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter. Features • Non -contact switching • For- direct pc board • Dual - in - line socket mounti

文件：61.16 Kbytes 页数：3 Pages

UOT

东贝光电

SLOTTED PHOTOINTERRUPTER

Description The MIT-5A117 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a reflective subminiature photointerrupter. Features • Non -contact switching • For- direct pc board or • Dual - in - line socket mountin

文件：56.03 Kbytes 页数：3 Pages

UOT

东贝光电

SLOTTED PHOTOINTERRUPTER

Description The MIT-5A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing. It is a trasmissive subminiature photointerrupter. Features • Non -contact switching • For- direct pc board • Dual - in - line socket mounting

文件：145.19 Kbytes 页数：3 Pages

UOT

东贝光电

SLOTTED PHOTOINTERRUPTER

Description The MIT-5A11C consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a reflective subminiature photointerrupter. Features • Non -contact switching • For- direct pc board or • Dual - in - line socket mountin

文件：51.98 Kbytes 页数：3 Pages

UOT

东贝光电

SLOTTED PHOTOINTERRUPTER

Description The MIT-5A11J consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter. Features • Non -contact switching • For- direct pc board • Dual - in - line socket mounting

文件：45.97 Kbytes 页数：3 Pages

UOT

东贝光电

丝印：MITH200PF1700LP；Package：Y3-M6；IGBT Module

Features / Advantages: • Trench IGBT - low VCE(sat) - easy paralleling due to the positive temperature coefficient of the on-state voltage - Tvjm = 175°C - square RBSOA @ 2x Ic - short circuit rated for 10 μsec. - low gate charge - low EMI • Free wheeling diode - fast and soft reverse

文件：210.32 Kbytes 页数：5 Pages

IXYS

艾赛斯