SLOTTED PHOTOINTERRUPTER

Description The MIT-5A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing. It is a trasmissive subminiature photointerrupter. Features • Non -contact switching • For- direct pc board • Dual - in - line socket mounting

文件：145.19 Kbytes 页数：3 Pages

UOT

东贝光电

SLOTTED PHOTOINTERRUPTER

Description The MIT-5A11C consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a reflective subminiature photointerrupter. Features • Non -contact switching • For- direct pc board or • Dual - in - line socket mountin

文件：51.98 Kbytes 页数：3 Pages

UOT

东贝光电

SLOTTED PHOTOINTERRUPTER

Description The MIT-5A11J consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter. Features • Non -contact switching • For- direct pc board • Dual - in - line socket mounting

文件：45.97 Kbytes 页数：3 Pages

UOT

东贝光电

500mW and 800mW 2.4 - 200 VOLTS ZENER DIODES

文件：112.37 Kbytes 页数：2 Pages

SSDI