MIT-5A11J规格书应用电路贸易商东贝光电UOT-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
MIT-5A11J	文件：45.97 Kbytes Page：3 Pages	SLOTTED PHOTOINTERRUPTER Description The MIT-5A11J consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter. Features • Non -contact switching • For- direct pc board • Dual - in - line socket mounting 文件：45.97 Kbytes 页数：3 Pages	UOT 东贝光电	UOT
SZ5A11	文件：112.37 Kbytes Page：2 Pages	500mW and 800mW 2.4 - 200 VOLTS ZENER DIODES 文件：112.37 Kbytes 页数：2 Pages	SSDI	SSDI
MIT-5A11B	文件：145.19 Kbytes Page：3 Pages	SLOTTED PHOTOINTERRUPTER Description The MIT-5A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing. It is a trasmissive subminiature photointerrupter. Features • Non -contact switching • For- direct pc board • Dual - in - line socket mounting 文件：145.19 Kbytes 页数：3 Pages	UOT 东贝光电	UOT
MIT-5A11C	文件：51.98 Kbytes Page：3 Pages	SLOTTED PHOTOINTERRUPTER Description The MIT-5A11C consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a reflective subminiature photointerrupter. Features • Non -contact switching • For- direct pc board or • Dual - in - line socket mountin 文件：51.98 Kbytes 页数：3 Pages	UOT 东贝光电	UOT

更多MIT-5A11J供应商更新时间2025-12-5 16:28:00