isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：331.4 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：331.38 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 500V, 13.0A, 0.5(ohm)

General Description The MDP13N50 uses advanced Magnachip’s MOSFET Technology, which provides low on state resistance, high switching performance and excellent quality. MDP13N50 is suitable device for SMPS, HID and general purpose applications. Features ■ VDS = 500V ■ ID = 13.0A @VGS = 10V ■ R

文件：851.29 Kbytes 页数：6 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：332.1 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：332.08 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 500V, 13.0A, 0.5(ohm)

General Description The MDP13N50 uses advanced Magnachip’s MOSFET Technology, which provides low on state resistance, high switching performance and excellent quality. MDP13N50 is suitable device for SMPS, HID and general purpose applications. Features ■ VDS = 500V ■ ID = 13.0A @VGS = 10V ■ R

文件：851.29 Kbytes 页数：6 Pages

MGCHIP

Thick Film Resistor Networks, Dual-In-Line, Molded DIP, 01, 03, 05 Schematics

FEATURES • 0.160 [4.06mm] maximum seated height and rugged, molded case construction. • Highly stable thick film • Low temperature coefficient (- 55°C to + 125°C) ± 100ppm/°C • Reduces total assembly costs • Compatible with automatic inserting equipment • Wide resistance range • Uniform per

文件：226.11 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Single N-channel Trench MOSFET 135V, 120A, 5.0mΩ

General Description The MDP14N050TH, Magnachip’s latest generation of MV MOSFET Technology, which provides high performance in the lowest Rds(on), fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power Drives of E-bik

文件：1.16845 Mbytes 页数：6 Pages

MGCHIP

15.6 Healthcare Display

Features • 15.6” Enclosure Display • Display Mode VA Type • 1920x1080 @60Hz • Brightness 250 nits (Typ.) • HDMI / VGA / Audio signal Input • Response time 25ms • Viewing Angle 85/85/85/85 • Power DC 12V /3A

文件：491.84 Kbytes 页数：2 Pages

DFI

友通资讯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：331.57 Kbytes 页数：2 Pages

ISC

无锡固电