isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：332.08 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 500V, 13.0A, 0.5(ohm)

General Description The MDP13N50 uses advanced Magnachip’s MOSFET Technology, which provides low on state resistance, high switching performance and excellent quality. MDP13N50 is suitable device for SMPS, HID and general purpose applications. Features ■ VDS = 500V ■ ID = 13.0A @VGS = 10V ■ R

文件：851.29 Kbytes 页数：6 Pages

MGCHIP

500V N-Ch MOSFET

MagnaChip

美格纳

500V N-Channel MOSFET

文件：999 Kbytes 页数：8 Pages

BWTECH

500V N-Channel MOSFET

文件：888.19 Kbytes 页数：6 Pages

BWTECH

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=13A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：316.4 Kbytes 页数：2 Pages

ISC

无锡固电