MDP

Stackable Double Banana Plug with Cable Guide

MDP0027

High Power Differential Line Driver

TheEL1503AADSLLineDrivercontainstwowidebandhigh-voltagedriverswhichareideallysuitedforbothADSLandHDSL2applications.Theycansupplya39.2VP-Psignalintoa22Ωloadwhileexhibitingverylowdistortion.TheEL1503Aalsohasanumberofpowersavingfeatures.TheIADJpincanbe

MDP0046

High Power Differential Line Driver

TheEL1503AADSLLineDrivercontainstwowidebandhigh-voltagedriverswhichareideallysuitedforbothADSLandHDSL2applications.Theycansupplya39.2VP-Psignalintoa22Ωloadwhileexhibitingverylowdistortion.TheEL1503Aalsohasanumberofpowersavingfeatures.TheIADJpincanbe

MDP06N033TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=159.8A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.3mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

MDP06N090TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=62A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

MDP10N055TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=130A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

MDP10N60G

N-Channel MOSFET 600V, 10A, 0.7(ohm)

GeneralDescription TheseN-channelMOSFETareproducedusingadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality. ThesedevicesaresuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications. Feat

MDP10N60GTH

N-Channel MOSFET 600V, 10A, 0.7(ohm)

GeneralDescription TheseN-channelMOSFETareproducedusingadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality. ThesedevicesaresuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications. Feat

MDP10N60GTH

isc N-Channel MOSFET Transistor

•FEATURES •WithTO-220Fpackaging •Highspeedswitching •Veryhighcommutationruggedness •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz •APPLICATIONS •PFCstages •LCD&PDPTV •Powersupply •Sw

MDP11N60TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

MDP12N50BTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

MDP12N50TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

MDP13N50

N-Channel MOSFET 500V, 13.0A, 0.5(ohm)

GeneralDescription TheMDP13N50usesadvancedMagnachip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellentquality.MDP13N50issuitabledeviceforSMPS,HIDandgeneralpurposeapplications. Features ■VDS=500V ■ID=13.0A@VGS=10V ■R

MDP13N50BTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MDP13N50TH

N-Channel MOSFET 500V, 13.0A, 0.5(ohm)

GeneralDescription TheMDP13N50usesadvancedMagnachip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellentquality.MDP13N50issuitabledeviceforSMPS,HIDandgeneralpurposeapplications. Features ■VDS=500V ■ID=13.0A@VGS=10V ■R

MDP13N50TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MDP14

Thick Film Resistor Networks, Dual-In-Line, Molded DIP, 01, 03, 05 Schematics

FEATURES •0.160[4.06mm]maximumseatedheightandrugged,moldedcaseconstruction. •Highlystablethickfilm •Lowtemperaturecoefficient(-55°Cto+125°C)±100ppm/°C •Reducestotalassemblycosts •Compatiblewithautomaticinsertingequipment •Wideresistancerange •Uniformper

MDP15N60GTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MDP16

Thick Film Resistor Networks, Dual-In-Line, Molded DIP, 01, 03, 05 Schematics

FEATURES •0.160[4.06mm]maximumseatedheightandrugged,moldedcaseconstruction. •Highlystablethickfilm •Lowtemperaturecoefficient(-55°Cto+125°C)±100ppm/°C •Reducestotalassemblycosts •Compatiblewithautomaticinsertingequipment •Wideresistancerange •Uniformper

MDP16-01-101F

Thick Film Resistor Networks, Dual-In-Line, Molded DIP, 01, 03, 05 Schematics

FEATURES •0.160[4.06mm]maximumseatedheightandrugged,moldedcaseconstruction. •Highlystablethickfilm •Lowtemperaturecoefficient(-55°Cto+125°C)±100ppm/°C •Reducestotalassemblycosts •Compatiblewithautomaticinsertingequipment •Wideresistancerange •Uniformper