MDP10N60GTH

isc N-Channel MOSFET Transistor

•FEATURES •WithTO-220Fpackaging •Highspeedswitching •Veryhighcommutationruggedness •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz •APPLICATIONS •PFCstages •LCD&PDPTV •Powersupply •Sw

MDP11N60TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

MDP12N50BTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

MDP12N50TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

MDP13N50

N-Channel MOSFET 500V, 13.0A, 0.5(ohm)

GeneralDescription TheMDP13N50usesadvancedMagnachip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellentquality.MDP13N50issuitabledeviceforSMPS,HIDandgeneralpurposeapplications. Features ■VDS=500V ■ID=13.0A@VGS=10V ■R

MDP13N50BTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MDP13N50TH

N-Channel MOSFET 500V, 13.0A, 0.5(ohm)

GeneralDescription TheMDP13N50usesadvancedMagnachip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellentquality.MDP13N50issuitabledeviceforSMPS,HIDandgeneralpurposeapplications. Features ■VDS=500V ■ID=13.0A@VGS=10V ■R

MDP13N50TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MDP14

Thick Film Resistor Networks, Dual-In-Line, Molded DIP, 01, 03, 05 Schematics

FEATURES •0.160[4.06mm]maximumseatedheightandrugged,moldedcaseconstruction. •Highlystablethickfilm •Lowtemperaturecoefficient(-55°Cto+125°C)±100ppm/°C •Reducestotalassemblycosts •Compatiblewithautomaticinsertingequipment •Wideresistancerange •Uniformper

MDP14N050TH

Single N-channel Trench MOSFET 135V, 120A, 5.0mΩ

GeneralDescription TheMDP14N050TH,Magnachip’slatestgenerationofMVMOSFET Technology,whichprovideshighperformanceinthelowestRds(on), fastswitchingperformance,andexcellentquality. Thesedevicescanalsobeutilizedinindustrialapplicationssuchas LowPowerDrivesofE-bik