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MDP11N60TH

N-ChannelMOSFET600V,11A,0.55(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP11N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MGP11N60E

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications

MotorolaMotorola, Inc

摩托罗拉

MGP11N60E

SHORTCIRCUITRATEDLOWON-VOLTAGE

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MGP11N60ED

SHORTCIRCUITRATEDLOWON-VOLTAGE

InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–block

ONSEMION Semiconductor

安森美半导体安森美半导体公司

OM11N60

POWERMOSFETINHERMETICISOLATED

[Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

OM11N60SA

POWERMOSFETINHERMETICISOLATED

[Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

OM11N60SA

POWERMOSFETINHERMETICISOLATED

DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperation).They

IRFInternational Rectifier

英飞凌英飞凌科技公司

PCFC11N60W

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

PSM11N60CT

11A600VSingleN-ChannelPowerMOSFET

PFCPFC Device Inc.

PFC

PSM11N60CTF

11A600VSingleN-ChannelPowerMOSFET

PFCPFC Device Inc.

PFC

SIHH11N60E

ESeriesPowerMOSFET

FEATURES •Fullylead(Pb)-freedevice •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Kelvinconnectionforreducedgatenoise •Materialcategorization:fordefinit

VishayVishay Siliconix

威世科技威世科技半导体

SIHH11N60E

Reducedswitchingandconductionlosses

VishayVishay Siliconix

威世科技威世科技半导体

SIHH11N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半导体

SPA11N60CFD

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPA11N60CFD

CoolMOSPowerTransistor

Features •Newrevolutionaryhighvoltagetechnology •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Periodicavalancherated •QualifiedaccordingtoJEDEC0)fortargetapplication

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPA11N60CFD

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPA11N60CFD

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPI11N60CFD

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPI11N60CFD

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
MAGNACH
2020+
TO-220F
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
ADI/亚德诺
23+
DIP8
69820
终端可以免费供样,支持BOM配单!
询价
MAGNACHIP/美格纳
21+
TO220F
19000
只做正品原装现货
询价
MAGNACHIP
22+
TO-220F
28600
只做原装正品现货假一赔十一级代理
询价
MAGNACHIP
21+
TO-220属封
50000
全新原装正品现货,支持订货
询价
MAGNACHIP
21+
TO-220F
56000
公司进口原装现货 批量特价支持
询价
MAGNACHIP/美格纳
21+
TO-220F
9800
只做原装正品假一赔十!正规渠道订货!
询价
MagnaChip/MagnaChip analog&am
21+
TO-220F
283
优势代理渠道,原装正品,可全系列订货开增值税票
询价
MagnaChip
22+
TO220F
2730
公司原装现货
询价
MAGNACHIP
1932+
TO-220F
353
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多MDF11N60B供应商 更新时间2024-6-14 14:15:00