二极管模块

ChunShuElec

新创椿树

High voltage NPN Power transistor for standard Definition CRT display

Description The MD2001FH is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art techno

文件：92.87 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

High voltage NPN Power transistor for standard Definition CRT display

Description The MD2001FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art tech

文件：99.97 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

High voltage NPN power transistor for standard definition CRT display

Description The MD2001FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art tech

文件：214.47 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

High voltage NPN power transistor for standard definition CRT display

Description The MD2001FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art tech

文件：214.47 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

High voltage NPN Power transistor for standard definition CRT display

Description The MD2009DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. General features ■ State-of-the-a

文件：225.46 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

High voltage NPN Power transistor for standard Definition CRT display

Description The MD2009DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. General features ■ State-of-the-a

文件：200.4 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

High voltage NPN Power transistor for standard Definition CRT display

Description The MD2009DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. General features ■ State-of-the-a

文件：200.4 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

1200V/200A 2 in one-package

General Description STARPOWER MOSFET Power Module provides very low RDS(on) as well as optimized intrinsic diode. It’s designed for the applications such SMPS and DC drives. Features  SiC power MOSFET  Low RDS(on)  Optimized intrinsic reverse diode  Chip sintering technology  Low ind

文件：118.54 Kbytes 页数：6 Pages

STARPOWER

斯达半导体

丝印：MD2009DFP；Package：TO-220FP；High voltage NPN power transistor for CRT TV

文件：268.54 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体