High voltage NPN Power transistor for standard Definition CRT display

Description The MD2001FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art tech

文件：99.97 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

High voltage NPN power transistor for standard definition CRT display

Description The MD2001FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art tech

文件：214.47 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

High voltage NPN power transistor for standard definition CRT display

Description The MD2001FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art tech

文件：214.47 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

标清CRT显示器的高压NPN功率晶体管

The MD2001FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. • State-of-the-art technology:Diffused collector “Enhanced generation” \n• Low base-drive requirements \n• Stable performances versus operating temperature variation \n• Fully insulated power package U.L. compliant \n• Tight hFE range at operating collector current;

ST

意法半导体

Package：ISOWATT218FX；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 700V 12A ISOWATT-218FX

STMICROELECTRONICS

意法半导体