NTDV20N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=46mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NTDV20N06L

MOSFET-Power,N-Channel,LogicLevel,DPAK/IPAK20A,60V

Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrolsandbridge circuits. Features •AECQ101Qualified−NTDV20N06L •TheseDevicesarePb−FreeandareRoHSCompliant TypicalApplications •PowerSupplies •Converters •Po

NTDV20N06L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=48mΩ(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

PHB20N06T

N-channelTrenchMOStransistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Features ■Verylowon-stateresistance ■Fastswitching. Applications ■Switchedmodepowersupplies ■DCtoDCconverters.

PHB20N06T

N-channelTrenchMOSstandardlevelFET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits L

PHB20N06T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PHD20N06T

N-Channel60-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature

PHD20N06T

N-channelTrenchMOStransistor

Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS™1technology. Features ■TrenchMOS™technology ■Lowon-stateresistance ■Fastswitching. Applications ■Switchedmodepowersupplies ■DCtoDCconverters ■Generalpurposeswitch.

PHD20N06T

N-channelTrenchMOSstandardlevelFET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits L

PHD20N06T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=77mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl