Bipolar Transistor -12V, -3A, Low VCE(sat), PNP Single MCPH6

Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm) • High allowable power dissipation • Halogen free compliance Applications

文件：520.45 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

PNP Epitaxial Planar Silicon Transistor DC / DC Converter Amplifi er

DC / DC Converter Amplifier Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm). • High allowable power dissipation. App

文件：245.2 Kbytes 页数：4 Pages

SANYO

三洋

Bipolar Transistor -12V, -3A, Low VCE(sat), PNP Single MCPH6

Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm) • High allowable power dissipation • Halogen free compliance Applications

文件：520.45 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Package：6-SMD，扁平引线；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 12V 3A 6MCPH

ONSEMI

安森美半导体