Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single MCPH6

Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm) • High allowable power dissipation Applications • DC-DC converter, relay d

文件：510.87 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-Current Switching Applications Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm). • High allowable power dissipati

文件：236.36 Kbytes 页数：4 Pages

SANYO

三洋

MCH6123: Bipolar Transistor, -50V, -3A, Low VCE(sat), PNP Single MCPH6

MCH6123 is Bipolar Transistor, -50V, -3A, Low VCE(sat), PNP Single MCPH6 for DC-DC converter, relay drivers, lamp drivers, motor drivers Applications. Adoption of MBIT process\nLarge current capacity\nLow collector-to-emitter saturation voltage\nHigh speed switching\nUltrasmall-sized package permitting applied sets to be made small and slim (0.85mm)\nHigh allowable power dissipation;

ONSEMI

安森美半导体

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single MCPH6

Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm) • High allowable power dissipation Applications • DC-DC converter, relay d

文件：510.87 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Package：6-SMD，扁平引线；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 3A 6MCPH

ONSEMI

安森美半导体