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型号	下载订购	功能描述	制造商上传企业	LOGO
MCH6342	文件：533.78 Kbytes Page：5 Pages	Single P-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 1.8V dr 文件：533.78 Kbytes 页数：5 Pages	ONSEMI 安森美半导体	ONSEMI
MCH6342	文件：89.71 Kbytes Page：4 Pages	General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance • Ultrahigh-speed switching • 1.8V drive • Halogen free compliance • Protection diode in 文件：89.71 Kbytes 页数：4 Pages	SANYO 三洋	SANYO
MCH6342	文件：472.42 Kbytes Page：7 Pages	General-Purpose Switching Device Applications 文件：472.42 Kbytes 页数：7 Pages	SANYO 三洋	SANYO
MCH6342	文件：1.05712 Mbytes Page：9 Pages	P-Channel 20 V (D-S) MOSFET 文件：1.05712 Mbytes 页数：9 Pages	VBSEMI 微碧半导体	VBSEMI
MCH6342	文件：300 bytes Page：1 Pages	单 P 沟道，功率 MOSFET，-30V，-4.5A，73mΩ This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. • Pb-Free, Halogen Free and RoHS Compliance\n• Environmental Consideration\n• Low On-Resistance\n• Improves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation\n• Ultra Small Package MCPH6 (2.0mm x 2.1mm x 0.85mmt)\n• Board Space Saving\n• ESD Diode-Protected Gate\n• ESD Resistance\n•;	ONSEMI 安森美半导体	ONSEMI
MCH6342-TL-H	文件：533.78 Kbytes Page：5 Pages	Single P-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 1.8V dr 文件：533.78 Kbytes 页数：5 Pages	ONSEMI 安森美半导体	ONSEMI
MCH6342-TL-W	文件：533.78 Kbytes Page：5 Pages	Single P-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 1.8V dr 文件：533.78 Kbytes 页数：5 Pages	ONSEMI 安森美半导体	ONSEMI
MCH6342_12	文件：472.42 Kbytes Page：7 Pages	General-Purpose Switching Device Applications 文件：472.42 Kbytes 页数：7 Pages	SANYO 三洋	SANYO

技术参数

Pb-free：
Pb
Halide free：
H
Status：
Active
Channel Polarity：
P-Channel
Configuration：
Single
V(BR)DSS Min (V)：
-30
VGS Max (V)：
10
VGS(th) Max (V)：
1.3
ID Max (A)：
-4.5
PD Max (W)：
1.5
RDS(on) Max @ VGS = 2.5 V(mΩ)：
99
RDS(on) Max @ VGS = 4.5 V(mΩ)：
73
Qg Typ @ VGS = 4.5 V (nC)：
20.5
Qg Typ @ VGS = 10 V (nC)：
8.6
Ciss Typ (pF)：
650
Package Type：
SC-88FL/MCPH-6

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	MCH6342	ON/安森美	20+	SOT-363	120000	原装正品可含税交易	询价
深圳市华来深电子有限公司	MCH6342	O	23+	MCPH6	8650	受权代理!全新原装现货特价热卖!	询价
深圳市鹏顺微电子科技有限公司	MCH6342	ON	2022+	SC-88FL / MCPH-6	38550	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市盈慧通电子有限公司	MCH6342	ONSEMI/安森美	2511	SOT-363	360000	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
深圳市联世界科技有限公司	MCH6342-TL-H	ON	24+/25+		2975	原装正品现货库存价优	询价
深圳市海天鸿电子科技有限公司	MCH6342-TL-H	ON	1706+	?	7500	只做原装进口,假一罚十	询价
深圳市振宏微科技有限公司	MCH6342-TL-H	SOT-323	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市纳立科技有限公司	MCH6342-TL-W		三年内		1983	只做原装正品	询价
深圳诚思涵科技有限公司	MCH6342-TL-H	SANYO	19+	MCPH-6	200000		询价
深圳市欧亚佳电子有限公司	MCH6342-TL-W	ON	20+	SMD	11520	特价全新原装公司现货	询价

更多MCH6342供应商更新时间2025-11-18 14:00:00

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