Bipolar Transistor -20V, -3A, Low VCE(sat), PNP Single MCPH6

Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm) • High allowable power dissipation • IECO is guaranteed for preventing re

文件：520.909 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

PNP Epitaxial Planar Silicon Transistor Load Switch Applications

Load Switch Applications Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm) • High allowable power dissipation • IECO is gu

文件：246.56 Kbytes 页数：4 Pages

SANYO

三洋

MCH6124: Bipolar Transistor, -20V, -3A, Low VCE(sat), PNP Single MCPH6

MCH6124 is Bipolar Transistor, -20V, -3A, Low VCE(sat), PNP Single MCPH6 for Load switch, DC-DC converter, motor drivers, charger Applications. Load Switch Applications\nLarge current capacity\nLow collector-to-emitter saturation voltage\nHigh speed switching\nUltrasmall-sized package permitting applied sets to be made small and slim (0.85mm)\nHigh allowable power dissipation\nIECO is guaranteed for preventing reverse fl ow from the collect;

ONSEMI

安森美半导体

Bipolar Transistor -20V, -3A, Low VCE(sat), PNP Single MCPH6

Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm) • High allowable power dissipation • IECO is guaranteed for preventing re

文件：520.909 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Package：6-SMD，扁平引线；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 20V 3A 6MCPH

ONSEMI

安森美半导体