MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a P-Channel Sillicon MOSFET (MCH3339) and a Schottky Barrier Diode (SBS007M) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switc

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SANYO

三洋

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode

ONSEMI

安森美半导体

Silicon Power Rectifier Stud Mount, Fast Recovery, 12 Amp

Description: The NTE5818 through NTE5825 are silicon fast recovery rectifiers in a DO4 type package having a typical recovery time of 150ns providing high efficiency at frequencies to 250kHz. Typical applications include DC power supplies, inverters, converters, ultrasonic systems, choppers, lo

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NTE

Schottky barrier diodes

DESCRIPTION The PRLL5817 to PRLL5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD87 hermetically sealed glass SMD packages incorporating ImplotecTM(1) technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected • Herme

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PHI

PHI

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * For surface mounted applications * Low profile package * Built-in strain relief * Metal to silicon rectifier , majority carrier conduction * Low power loss , High efficiency * High current capability

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ZOWIE

智威