MCH5819

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with an N-channel silicon MOSFET (MCH3408) and a schottky barrier diode (SBS006M) contained in 1 package facilitating high-density mounting. • [MOS] 1) Low ON-resistance. 2) Ultrahigh-speed switch

文件：71.41 Kbytes 页数：5 Pages

SANYO

三洋

MCH5819

ONSEMI

安森美半导体

1A Surface Mount Schottky Rectifiers

1A Surface Mount Schottky Rectifiers Features • Low profile in Melf (GL-41) package • Low power loss, high efficiency • Low forward voltage drop; Low leakage current • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • RoHS Compliant

文件：142.19 Kbytes 页数：3 Pages

TAITRON

Schottky Diodes

Schottky Diodes Features Power Dissipation: PD= 300mW Collector Current: IF=1A Collector-Base Voltage: VR=40V

文件：36.71 Kbytes 页数：1 Pages

KEXIN

科信电子

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

文件：547.19 Kbytes 页数：2 Pages

PACELEADER

霈峰