DUAL GENERAL PURPOSE TRANSISTORS SWITCHING TRANSISTORS

DESCRIPTION The MBT3904 D device i s a spin off of our popular SOT 23/SOT 323 three leaded device. It is designed for general purpose amplifier applic ations and is housed in the SC 88( SOT 363 six leaded surface mount package. By putting two discre te devices in one package , this device i

文件：599.37 Kbytes 页数：7 Pages

AITSEMI

创瑞科技

DUAL GENERAL PURPOSE TRANSISTORS SWITCHING TRANSISTORS

DESCRIPTION The MBT3904 D device i s a spin off of our popular SOT 23/SOT 323 three leaded device. It is designed for general purpose amplifier applic ations and is housed in the SC 88( SOT 363 six leaded surface mount package. By putting two discre te devices in one package , this device i

文件：599.37 Kbytes 页数：7 Pages

AITSEMI

创瑞科技

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

文件：102.68 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded surface mount package. By putting two d

文件：422.11 Kbytes 页数：10 Pages

LRC

乐山无线电

Dual General Purpose Transistors

The MBT3904DW1T1 and MBT3904DW2T1 devices are a spin-of f of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal

文件：105.7 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

The MBT3904DW1T1 and MBT3904DW2T1 devices are a spin-of f of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal

文件：105.7 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

文件：137.55 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

文件：102.68 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

文件：138.28 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Gallium Arsenide CATV Integrated Amplifier Module

Description • 24 Vdc Supply or 12 Vdc Supply with Bias Change, 40 to 870 MHz, CATV Integrated Forward Amplifier Module Features • Specified for 79-, 112- and 132-Channel Loading • Excellent Distortion Performance • Built-in Input Diode Protection • GaAs FET Transistor Technology • Unconditi

文件：181.51 Kbytes 页数：9 Pages

恩XP