Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

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双 NPN 双极晶体管

The MBT3904DW1 and MBT3904DW2 devices are spin-offs of our popular SOT-23/SOT-323 three-leaded devices. This Dual NPN Bipolar Transistor is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one packag • hFE, 100-300\n• Reduces Board Space\n• Available in 8 mm, 7-inch/3,000 Unit Tape and Reel\n• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CompliantCapable;

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安森美半导体

Dual General Purpose Transistors

Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded surface mount package. By putting two d

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乐山无线电

Dual General Purpose Transistors

The MBT3904DW1T1 and MBT3904DW2T1 devices are a spin-of f of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal

文件：105.7 Kbytes 页数：8 Pages

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安森美半导体

Dual General Purpose Transistors

The MBT3904DW1T1 and MBT3904DW2T1 devices are a spin-of f of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal

文件：105.7 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

文件：137.55 Kbytes 页数：8 Pages

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安森美半导体

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

文件：102.68 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

文件：138.28 Kbytes 页数：8 Pages

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Gallium Arsenide CATV Integrated Amplifier Module

Description • 24 Vdc Supply or 12 Vdc Supply with Bias Change, 40 to 870 MHz, CATV Integrated Forward Amplifier Module Features • Specified for 79-, 112- and 132-Channel Loading • Excellent Distortion Performance • Built-in Input Diode Protection • GaAs FET Transistor Technology • Unconditi

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恩XP

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

文件：102.68 Kbytes 页数：8 Pages

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安森美半导体