首页 >MBT3904DW1>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MBT3904DW1 | Dual General Purpose Transistors TheMBT3904DW1andMBT3904DW2devicesareaspin−offofourpopularSOT−23/SOT−323three−leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT−363six−leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisidealfor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
Dual General Purpose Transistors DualGeneralPurposeTransistors TheMBT3904DW1T1,MBT3906DW1T1,andMBT3946DW1T1devicesarespin–offsofourpopularSOT–23/SOT–323three–leadeddevices.TheyaredesignedforgeneralpurposeamplifierapplicationsandarehousedintheSOT–363six–leadedsurfacemountpackage.Byputtingtwod | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | LRC | ||
Dual General Purpose Transistors TheMBT3904DW1T1andMBT3904DW2T1devicesareaspin-offofourpopularSOT-23/SOT-323three-leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT-363six-leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisideal | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Dual General Purpose Transistors TheMBT3904DW1andMBT3904DW2devicesareaspin−offofourpopularSOT−23/SOT−323three−leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT−363six−leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisidealfor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Dual General Purpose Transistors TheMBT3904DW1andMBT3904DW2devicesareaspin−offofourpopularSOT−23/SOT−323three−leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT−363six−leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisidealfor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Dual General Purpose Transistors TheMBT3904DW1andMBT3904DW2devicesareaspin−offofourpopularSOT−23/SOT−323three−leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT−363six−leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisidealfor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Gallium Arsenide CATV Integrated Amplifier Module Description •24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features •Specifiedfor79-,112-and132-ChannelLoading •ExcellentDistortionPerformance •Built-inInputDiodeProtection •GaAsFETTransistorTechnology •Unconditi | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
Dual General Purpose Transistors TheMBT3904DW1T1andMBT3904DW2T1devicesareaspin-offofourpopularSOT-23/SOT-323three-leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT-363six-leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisideal | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Dual General Purpose Transistors | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 | ETL | ||
Dual General Purpose Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Dual General Purpose Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Dual General Purpose Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列 描述：TRANS 2NPN 40V 0.2A SC88 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
DualNPNTransistor DualGeneralPurposeTransistorNPN+NPNSilicon Features •Highcollector-emitterbreakdienvoltage.(BVCEO=40V@I=1mA) •Smallloadswitchtransistorwithhighgainandlowstaurationvoltage,isdesignedforgeneralpurposeamflifierandswitchingapplicationsatcollectorcurrent. •Offer | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | FORMOSA | ||
DualGeneralPurposeTransistors TheMBT3904DW1andMBT3904DW2devicesareaspin−offofourpopularSOT−23/SOT−323three−leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT−363six−leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisidealfor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
DualGeneralPurposeTransistors TheMBT3904DW1andMBT3904DW2devicesareaspin−offofourpopularSOT−23/SOT−323three−leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT−363six−leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisidealfor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
详细参数
- 型号：
MBT3904DW1
- 功能描述：
两极晶体管 - BJT 200mA 60V Dual NPN
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
PNP 集电极—基极电压
- VCBO：
集电极—发射极最大电压
- VCEO：
- 40 V 发射极 - 基极电压
- VEBO：
- 6 V
- 增益带宽产品fT：
直流集电极/Base Gain hfe
- Min：
100 A
- 安装风格：
SMD/SMT
- 封装/箱体：
PowerFLAT 2 x 2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/ONSemiconductor/安森 |
2008++ |
SOT-363/SOT-323-6 |
12200 |
新进库存/原装 |
询价 | ||
MBT |
13+ |
SOT-363 |
12000 |
特价热销现货库存 |
询价 | ||
ON |
16+ |
SOT363 |
24000 |
原装现货假一罚十 |
询价 | ||
SOT-363 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
ON |
2023+ |
SOT-363 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
N/A |
2021+ |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
MBT |
2021+ |
60000 |
原装现货，欢迎询价 |
询价 | |||
ON |
22+ |
TO-220-3 |
50000 |
ON二三极管全系列在售 |
询价 | ||
ON-安森美 |
24+25+/26+27+ |
SOT-363 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
ON |
23+ |
SOT-363 |
8000 |
只做原装现货 |
询价 |
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相关库存
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