SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

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EIC

Surface Mount Schottky Power Rectifier

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ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTSThese devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high f • Small Compact Surface Mountable Package with J−Bend Leads\n• Rectangular Package for Automated Handling\n• Highly Stable Oxide Passivated Junction\n• Very Low Forward Voltage Drop (0.5 V Max @ 3.0 A, TJ = 25°C)\n• Excellent Ability to Withstand Reverse Avalanche Energy Transients\n• Guard−Ring for;

恩XP

Schottky Barrier Rectifiers

EIC

灿阳

Package：DO-214AB，SMC；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 30V 3A SMC-2

ONSEMI

安森美半导体

Package：DO-214AB，SMC；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 30V 4A SMC

ONSEMI

安森美半导体

Package：DO-214AB，SMC；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 30V 4A SMC

ONSEMI

安森美半导体