Package：DO-201AA，DO-27，轴向；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 60V 3A DO201AD

ONSEMI

安森美半导体

SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 3.0A

DESCRIPTION The MBR 3 20 F ~MBR 3 200 F are available in SOD 123FL Pa ckage FEATURES  Plastic package has Underwriters Laboratory Flammability Classification 94V 0  Low power loss, high efficiency  For use in low voltage high frequency inverters, free wheeling, and polarity protecti

文件：483.58 Kbytes 页数：5 Pages

AITSEMI

创瑞科技

Axial Lead Rectifiers

These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee

文件：168.5 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

SCHOTTKY BARRIER RECTIFIER

DESCRIPTION The UTC MBR360 is a 3.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high efficiency, etc. The UTC MBR360 is suitable for free wheeling diodes, high frequency inverters, low voltage and polarity protection diode

文件：135.15 Kbytes 页数：3 Pages

UTC

友顺

SCHOTTKY BARRIER RECTIFIER

DESCRIPTION The UTC MBR360 is a 3.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high efficiency, etc. The UTC MBR360 is suitable for free wheeling diodes, high frequency inverters, low voltage and polarity protection diode

文件：135.15 Kbytes 页数：3 Pages

UTC

友顺

Axial Lead Rectifiers

These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling

文件：57.32 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Axial Lead Rectifiers

These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee

文件：168.5 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Axial Lead Rectifiers

These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee

文件：168.5 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi

文件：75.68 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

SCHOTTKY RECTIFIER

Description/ Features The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. • Low profile, axial leade

文件：33.77 Kbytes 页数：5 Pages

IRF