Axial Lead Rectifiers

These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee

文件：168.5 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Axial Lead Rectifiers

These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling

文件：57.32 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Axial Lead Rectifiers

文件：59.75 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Axial Lead Rectifiers

These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee

文件：168.5 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Axial Lead Rectifiers

文件：59.75 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Package：DO-201AA，DO-27，轴向；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 60V 3A DO201AD

ONSEMI

安森美半导体

Package：DO-201AA，DO-27，轴向；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 60V 3A DO201AD

ONSEMI

安森美半导体