SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 3.0A

DESCRIPTION The MBR 3 20 F ~MBR 3 200 F are available in SOD 123FL Pa ckage FEATURES  Plastic package has Underwriters Laboratory Flammability Classification 94V 0  Low power loss, high efficiency  For use in low voltage high frequency inverters, free wheeling, and polarity protecti

文件：483.58 Kbytes 页数：5 Pages

AITSEMI

创瑞科技

SCHOTTKY DIODES

AiT-Semi

创瑞科技

Axial Lead Rectifiers

文件：59.75 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Axial Lead Rectifiers

These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee

文件：168.5 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

SCHOTTKY BARRIER DIODE

文件：368.93 Kbytes 页数：9 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司