High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

文件：94.22 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vish

文件：110.87 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop · Low Power Losses, High Efficiency · High Forward Surge Capability APPLICATIONS · Switching Mode Power Supply (SMPS) · Freewheeling Diode · DC/DC Converter

文件：256.76 Kbytes 页数：2 Pages

ISC

无锡固电

SWITCHMODE Power Rectifiers

Features  Low Power Loss / High Efficiency  New Package Provides Capability of Inspection and Probe After Board Mounting  Guardring for Stress Protection  Low Forward Voltage Drop  175C Operating Junction Temperature  Wettable Flacks Option Available  NRVB Prefix for Automotive and

文件：189.66 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifiers

Features  Low Power Loss / High Efficiency  New Package Provides Capability of Inspection and Probe After Board Mounting  Guardring for Stress Protection  Low Forward Voltage Drop  175C Operating Junction Temperature  Wettable Flacks Option Available  NRVB Prefix for Automotive and

文件：189.66 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifiers

Features  Low Power Loss / High Efficiency  New Package Provides Capability of Inspection and Probe After Board Mounting  Guardring for Stress Protection  Low Forward Voltage Drop  175C Operating Junction Temperature  Wettable Flacks Option Available  NRVB Prefix for Automotive and

文件：189.66 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifiers

Features  Low Power Loss / High Efficiency  New Package Provides Capability of Inspection and Probe After Board Mounting  Guardring for Stress Protection  Low Forward Voltage Drop  175C Operating Junction Temperature  Wettable Flacks Option Available  NRVB Prefix for Automotive and

文件：189.66 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

文件：73.17 Kbytes 页数：2 Pages

DIODES

美台半导体

丝印：MBR10120CT；Package：TO-220AB；Schottky Diodes

FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

文件：1.08402 Mbytes 页数：3 Pages

RFE

RFE international

Schottky Diodes

Features ● High frequency operation ● Low forward voltage drop ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability ● Solder dip 275 °C max. 7 s, per JESD 22-B106 Typical Ap

文件：143.88 Kbytes 页数：3 Pages

YANGJIE

扬杰电子