SCHOTTKY BARRIER RECTIFIERS 10 AMPERES, 60 to 100 VOLTS

This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9

文件：415.35 Kbytes 页数：4 Pages

KERSEMI

SCHOTTKY BARRIER RECTIFIER

■ DESCRIPTION The UTC MBR10100 is a 10A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR10100 is suitable for free wheeling an

文件：132.95 Kbytes 页数：3 Pages

UTC

友顺

SCHOTTKY BARRIER RECTIFIER

■ DESCRIPTION The UTC MBR10100 is a 10A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR10100 is suitable for free wheeling an

文件：132.95 Kbytes 页数：3 Pages

UTC

友顺

SCHOTTKY BARRIER RECTIFIER

■ DESCRIPTION The UTC MBR10100 is a 10A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR10100 is suitable for free wheeling an

文件：132.95 Kbytes 页数：3 Pages

UTC

友顺

SCHOTTKY BARRIER RECTIFIER

■ DESCRIPTION The UTC MBR10100 is a 10A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR10100 is suitable for free wheeling an

文件：132.95 Kbytes 页数：3 Pages

UTC

友顺

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

文件：94.22 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vish

文件：110.87 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

SWITCHMODE Power Rectifiers

Features  Low Power Loss / High Efficiency  New Package Provides Capability of Inspection and Probe After Board Mounting  Guardring for Stress Protection  Low Forward Voltage Drop  175C Operating Junction Temperature  Wettable Flacks Option Available  NRVB Prefix for Automotive and

文件：189.66 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifiers

Features  Low Power Loss / High Efficiency  New Package Provides Capability of Inspection and Probe After Board Mounting  Guardring for Stress Protection  Low Forward Voltage Drop  175C Operating Junction Temperature  Wettable Flacks Option Available  NRVB Prefix for Automotive and

文件：189.66 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifiers

Features  Low Power Loss / High Efficiency  New Package Provides Capability of Inspection and Probe After Board Mounting  Guardring for Stress Protection  Low Forward Voltage Drop  175C Operating Junction Temperature  Wettable Flacks Option Available  NRVB Prefix for Automotive and

文件：189.66 Kbytes 页数：5 Pages

ONSEMI

安森美半导体