MBD

包装：散装 类别：RF/IF，射频/中频和 RFID RF 配件 描述：MOUNT 3/4\

TE Connectivity Laird

MBD101

SILICON SCHOTTKY BARRIER DIODES

DesignedprimarilyforUHFmixerapplicationsbutsuitablealsoforuseindetectorandultra−fastswitchingcircuits.Suppliedinaninexpensiveplasticpackageforlow−cost,high−volumeconsumerrequirements.AlsoavailableinSurfaceMountpackage. Features •LowNoiseFigure−6.0dBTyp@1

MBD101G

Schottky Barrier Diodes

DesignedprimarilyforUHFmixerapplicationsbutsuitablealsoforuseindetectorandultra−fastswitchingcircuits.Suppliedinaninexpensiveplasticpackageforlow−cost,high−volumeconsumerrequirements.AlsoavailableinSurfaceMountpackage. Features •LowNoiseFigure−6.0dBTyp@1

MBD1057-0805-2

Planar Back (Tunnel) Diodes MBD Series; ·Zero bias operation\n·Screening per MIL-PRF-19500and MIL-PRF-35834 available\n·Low Video Impedance\n·Excellent temperature stability\n;

The MBD series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized for detector operation and offered in five nominal values with varying degrees of sensitivity and video impedance. The back detector is generally operated with zero bias and is known for its excellent temperature stability and fast video rise times.

MBD1057-C18

Planar Back (Tunnel) Diodes MBD Series; ·Zero bias operation\n·Screening per MIL-PRF-19500and MIL-PRF-35834 available\n·Low Video Impedance\n·Excellent temperature stability\n;

The MBD series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized for detector operation and offered in five nominal values with varying degrees of sensitivity and video impedance. The back detector is generally operated with zero bias and is known for its excellent temperature stability and fast video rise times.

MBD110DWT1

Dual Schottky Barrier Diodes

DualSchottkyBarrierDiodes Applicationcircuitdesignsaremovingtowardtheconsolidationofdevicecountandintosmallerpackages.ThenewSOT–363packageisasolutionwhichsimplifiescircuitdesign,reducesdevicecount,andreducesboardspacebyputtingtwodiscretedevicesinonesmall

MBD110DWT1

Dual Schottky Barrier Diodes

Applicationcircuitdesignsaremovingtowardtheconsolidationofdevicecountandintosmallerpackages.ThenewSOT−363packageisasolutionwhichsimplifiescircuitdesign,reducesdevicecount,andreducesboardspacebyputtingtwodiscretedevicesinonesmallsix−leadedpackage.TheSOT−3

MBD110DWT1

Dual Schottky Barrier Diodes

Features ●ExtremelyLowMinorityCarrierLifetime ●VeryLowCapacitance ●LowReverseLeakage

MBD110DWT1

Dual SCHOTTKY Barrier Diodes

Applicationcircuitdesignsaremovingtowardtheconsolidationofdevicecountandintosmallerpackages.ThenewSOT–363packageisasolutionwhichsimplifiescircuitdesign,reducesdevicecount,andreducesboardspacebyputtingtwodiscretedevicesinonesmallsix–leadedpackage.TheSOT–3

MBD110DWT1G

丝印：M4；Package：SC-88；Dual Schottky Barrier Diodes

Applicationcircuitdesignsaremovingtowardtheconsolidationof devicecountandintosmallerpackages.ThenewSOT−363packageisa solutionwhichsimplifiescircuitdesign,reducesdevicecount,andreduces boardspacebyputtingtwodiscretedevicesinonesmallsix−leaded package.TheS